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ON Semiconductort PNP
High-Current Complementary Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applications.
MJ11015 MJ11012
NPN
* High DC Current Gain -- * *
hFE = 1000 (Min) @ IC - 20 Adc Monolithic Construction with Built-in Base Emitter Shunt Resistor Junction Temperature to +200_C
MJ11016 *
*ON Semiconductor Preferred Device
MAXIMUM RATINGS
Rating
Symbol VCEO VCB VEB IC IB
MJ11012 60 60
MJ11015 MJ11016 120 120
Unit Vdc Vdc Vdc Adc Adc
30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60-120 VOLTS 200 WATTS
IIIIIIII I I II IIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII I II II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII II I I II I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIII I I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I I I I III I III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current 5 30 1 Total Device Dissipation @TC = 25_C Derate above 25_C @ TC = 100_C Operating Storage Junction Temperature Range PD 200 1.15 Watts W/_C _C TJ, Tstg -55 to +200
CASE 1-07 TO-204AA (TO-3)
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC TL
Max
Unit
Thermal Resistance, Junction to Case
0.87 275
_C/W _C
Maximum Lead Temperature for Soldering Purposes for v 10 Seconds. PNP MJ11015
COLLECTOR
NPN MJ11012 MJ11016
COLLECTOR
BASE
BASE
8.0 k
40
8.0 k
40
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2001
1
May, 2001 - Rev. 4
Publication Order Number: MJ11012/D
II II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted.)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS(1)
OFF CHARACTERISTICS
Base-Emitter Saturation Voltage (IC = 20 A, IB = 200 mAdc) (IC = 30 A, IB = 300 mAdc)
Collector-Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) (IC = 30 Adc, IB = 300 mAdc)
DC Current Gain (IC = 20 Adc,VCE = 5 Vdc) (IC = 30 Adc, VCE = 5 Vdc)
Current-Gain Bandwidth Product (IC = 10 A, VCE = 3 Vdc, f = 1 MHz)
Collector-Emitter Leakage Current (VCE = 50 Vdc, IB = 0)
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
Collector-Emitter Leakage Current (VCE = 60 Vdc, RBE = 1k ohm) (VCE = 120 Vdc, RBE = 1k ohm) (VCE = 60 Vdc, RBE = 1k ohm, TC = 150_C) (VCE = 120 Vdc, RBE = 1k ohm, TC = 150_C)
Collector-Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0)
Characteristics
MJ11015 MJ11012 MJ11016
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MJ11012 MJ11015, MJ11016 MJ11012 MJ11015, MJ11016 MJ11012 MJ11015, MJ11016 V(BR)CEO Symbol VCE(sat) VBE(sat) ICEO IEBO ICER hFE hfe 1000 200 Min 60 120 -- -- -- -- -- -- -- -- -- -- 4 Max 3.5 5 -- -- -- -- -- 3 4 1 5 1 1 5 5 mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc --
2
MJ11015 MJ11012 MJ11016
hFE , SMALL-SIGNAL CURRENT GAIN (NORMALIZED 30 k 20 k hFE, DC CURRENT GAIN 10 k 7k 5k 3k 2k PNP MJ11015 NPN MJ11012, MJ11016 2 1 0.5 0.2 0.1 0.05 0.02 0.01 PNP MJ11015 NPN MJ11012, MJ11016 VCE = 3 Vdc IC = 10 mAdc TJ = 25C 20 30 50 70 100 200 300 f, FREQUENCY (kHz) 500 700 1.0 k
700 500 300 0.3
VCE = 5 Vdc TJ = 25C 0.5 0.7 5 7 10 1 2 3 IC, COLLECTOR CURRENT (AMP) 20 30
0.005 10
Figure 2. DC Current Gain (1)
Figure 3. Small-Signal Current Gain
5 4 V, VOLTAGE (VOLTS) 3 2 1 0 0.1
TJ = 25C IC/IB = 100
IC, COLLECTOR CURRENT (AMP)
PNP MJ11015 NPN MJ11012, MJ11016
50 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 2 3 BONDING WIRE LIMITATION THERMAL LIMITATION @ TC = 25C SECOND BREAKDOWN LIMITATION MJ11012 MJ11015, MJ11016 5 7 10 20 30 50 70 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VBE(sat) VCE(sat)
0.2
0.5
1
2
5
10
20
50
100
IC, COLLECTOR CURRENT (AMP)
Figure 4. "On" Voltages (1)
Figure 5. Active Region DC Safe Operating Area
There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operations e.g., the transistor must not be subjected to greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
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3
MJ11015 MJ11012 MJ11016
PACKAGE DIMENSIONS
CASE 1-07 TO-204AA (TO-3) ISSUE Z
A N C -T- E D U V
2 2 PL SEATING PLANE
K
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005) L G
1
TQ
M
Y
M
-Y-
H
B
-Q- 0.13 (0.005)
M
TY
M
DIM A B C D E G H K L N Q U V
INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188
MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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MJ11012/D

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